SIS780DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

722pF @ 15V

Number of Elements :

1

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

Number of Terminations :

5

Fall Time (Typ) :

9 ns

Turn On Delay Time :

7 ns

Published :

2017

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 15A, 10V

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

50A

Number of Channels :

1

Package / Case :

PowerPAK® 1212-8

Power Dissipation-Max :

27.7W Tc

Number of Pins :

8

Turn-Off Delay Time :

14 ns

Element Configuration :

Single

Reach Compliance Code :

Unknown

Rise Time :

11ns

Gate Charge (Qg) (Max) @ Vgs :

24.5nC @ 10V

Pin Count :

8

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

ECCN Code :

EAR99

JESD-30 Code :

S-XDSO-C5

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

Schottky Diode (Body)

Mounting Type :

Surface Mount

Terminal Position :

Dual

DS Breakdown Voltage-Min :

30V

Factory Lead Time :

14 Weeks