SIS776DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Number of Pins :

8

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

S-XDSO-C5

Series :

SkyFET®, TrenchFET®

ECCN Code :

EAR99

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Radiation Hardening :

No

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

20 mJ

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 10A, 10V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-50°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Published :

2016

Power Dissipation-Max :

3.8W Ta 52W Tc

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

11ns

DS Breakdown Voltage-Min :

30V

Continuous Drain Current (ID) :

35A

FET Feature :

Schottky Diode (Body)

Factory Lead Time :

15 Weeks

Turn On Delay Time :

18 ns

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 15V

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Number of Elements :

1

Package / Case :

PowerPAK® 1212-8

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0062Ohm

Turn-Off Delay Time :

20 ns

Fall Time (Typ) :

10 ns

Pulsed Drain Current-Max (IDM) :

60A

Transistor Element Material :

SILICON

FET Type :

N-Channel