SIS698DN-T1-GE3

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Mfr.Part #
SIS698DN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET N-CH 100V 6.9A PPAK1212-8
Stock
3,244
In Stock :
3,244

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
8
Case Connection :
DRAIN
JESD-30 Code :
R-PDSO-C5
Current - Continuous Drain (Id) @ 25°C :
6.9A Tc
Drain to Source Voltage (Vdss) :
100V
Continuous Drain Current (ID) :
2.8A
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
14 Weeks
Transistor Application :
SWITCHING
Package / Case :
PowerPAK® 1212-8
Terminal Position :
Dual
Mount :
Surface Mount
Power Dissipation :
3.2W
Drain Current-Max (Abs) (ID) :
6.9A
Number of Terminations :
5
Power Dissipation-Max :
19.8W Tc
Terminal Form :
C BEND
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 50V
Pin Count :
8
Vgs(th) (Max) @ Id :
3.5V @ 250µA
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
195m Ω @ 2.5A, 10V
Number of Channels :
1
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Datasheets
SIS698DN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIS698DN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® 1212-8, Number of Terminations:5, Number of Channels:1, Mounting Type:Surface Mount, SIS698DN-T1-GE3 pinout, SIS698DN-T1-GE3 datasheet PDF, SIS698DN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIS698DN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIS698DN-T1-GE3


N-Channel Tape & Reel (TR) 195m Ω @ 2.5A, 10V ±20V 210pF @ 50V 8nC @ 10V 100V PowerPAK® 1212-8

SIS698DN-T1-GE3 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 210pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.

SIS698DN-T1-GE3 Features


a continuous drain current (ID) of 2.8A
a 100V drain to source voltage (Vdss)


SIS698DN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIS698DN-T1-GE3 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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