SIS698DN-T1-GE3
- Mfr.Part #
- SIS698DN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.9A PPAK1212-8
- Stock
- 3,244
- In Stock :
- 3,244
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PDSO-C5
- Current - Continuous Drain (Id) @ 25°C :
- 6.9A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Continuous Drain Current (ID) :
- 2.8A
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 14 Weeks
- Transistor Application :
- SWITCHING
- Package / Case :
- PowerPAK® 1212-8
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Power Dissipation :
- 3.2W
- Drain Current-Max (Abs) (ID) :
- 6.9A
- Number of Terminations :
- 5
- Power Dissipation-Max :
- 19.8W Tc
- Terminal Form :
- C BEND
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 50V
- Pin Count :
- 8
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 10V
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 195m Ω @ 2.5A, 10V
- Number of Channels :
- 1
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Datasheets
- SIS698DN-T1-GE3
N-Channel Tape & Reel (TR) 195m Ω @ 2.5A, 10V ±20V 210pF @ 50V 8nC @ 10V 100V PowerPAK® 1212-8
SIS698DN-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 210pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2.8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 6.9A.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.
SIS698DN-T1-GE3 Features
a continuous drain current (ID) of 2.8A
a 100V drain to source voltage (Vdss)
SIS698DN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SIS698DN-T1-GE3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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