SIS606BDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Resistance :

14.5mOhm

Factory Lead Time :

14 Weeks

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta 35.3A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET® Gen IV

Vgs (Max) :

±20V

Supplier Device Package :

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs :

17.4mOhm @ 10A, 10V

Power Dissipation-Max :

3.7W Ta 52W Tc

Package / Case :

PowerPAK® 1212-8

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1470pF @ 50V