SIS334DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

50A

Power Dissipation-Max :

3.8W Ta 50W Tc

Drain to Source Breakdown Voltage :

30V

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

15 ns

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.8W

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

11.3m Ω @ 10A, 10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Number of Pins :

8

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Dual

Case Connection :

DRAIN

Package / Case :

PowerPAK® 1212-8

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 15V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

8 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Transistor Application :

SWITCHING

JESD-30 Code :

S-XDSO-C5

Terminal Form :

C BEND

Number of Elements :

1

Vgs (Max) :

±20V

Number of Terminations :

5

Rise Time :

10ns

Number of Channels :

1

Mount :

Surface Mount

Turn On Delay Time :

9 ns

Series :

TrenchFET®

ECCN Code :

EAR99

Mounting Type :

Surface Mount