SIS330DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0056Ohm

REACH SVHC :

Unknown

FET Type :

N-Channel

Height :

1.12mm

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 10A, 10V

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-C5

Terminal Form :

C BEND

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Width :

3.15mm

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Vgs (Max) :

±20V

Turn-Off Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

PowerPAK® 1212-8

Published :

2014

Transistor Application :

SWITCHING

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.15mm

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Pin Count :

8

Pulsed Drain Current-Max (IDM) :

70A

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 15V

Threshold Voltage :

1.2V

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

16 ns

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

20 mJ

Number of Elements :

1

Continuous Drain Current (ID) :

35A

Number of Terminations :

5

Power Dissipation-Max :

3.7W Ta 52W Tc

Gate to Source Voltage (Vgs) :

20V