SIRC16DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 4.5V

Series :

TrenchFET® Gen IV

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

+20V, -16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

0.96m Ω @ 15A, 10V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

5150pF @ 10V

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

54.3W Tc