SIRC10DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Turn-Off Delay Time :

15 ns

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET® Gen IV

Reach Compliance Code :

Unknown

Number of Channels :

1

Power Dissipation-Max :

43W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

1.17mm

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

23.9A

ECCN Code :

EAR99

Manufacturer Package Identifier :

S17-0173-Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Published :

2018

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drain to Source Breakdown Voltage :

30V

FET Feature :

Schottky Diode (Body)

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

+20V, -16V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 10A, 10V

Power Dissipation :

3.6W

Input Capacitance (Ciss) (Max) @ Vds :

1873pF @ 15V

Turn On Delay Time :

10 ns

Factory Lead Time :

14 Weeks