SIR798DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5050pF @ 15V

Rise Time :

11ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.05 Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.00205Ohm

Number of Elements :

1

Vgs (Max) :

±20V

REACH SVHC :

Unknown

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PDSO-C5

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Power Dissipation-Max :

83W Tc

Turn On Delay Time :

17 ns

Continuous Drain Current (ID) :

60A

Package / Case :

PowerPAK® SO-8

Transistor Element Material :

SILICON

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Published :

2015

Turn-Off Delay Time :

43 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Threshold Voltage :

1V

Contact Plating :

Tin

FET Feature :

Schottky Diode (Body)

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

9 ns

ECCN Code :

EAR99

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Weight :

506.605978mg

Terminal Form :

C BEND