SIR788DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Number of Terminations :

5

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

9 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 20A, 10V

Number of Channels :

1

Turn-Off Delay Time :

29 ns

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Number of Elements :

1

Length :

6.25mm

Published :

2013

REACH SVHC :

Unknown

Width :

5.26mm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

FET Feature :

Schottky Diode (Body)

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2873pF @ 15V

Height :

1.12mm

Rise Time :

11ns

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

5W Ta 48W Tc

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

60A

Drain-source On Resistance-Max :

0.0034Ohm

Transistor Element Material :

SILICON

Series :

SkyFET®, TrenchFET®

Weight :

506.605978mg

Terminal Form :

C BEND

Turn On Delay Time :

21 ns

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-C5