SIR688DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Terminal Position :

Dual

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Power Dissipation :

5.4W

Input Capacitance (Ciss) (Max) @ Vds :

3105pF @ 30V

Power Dissipation-Max :

5.4W Ta 83W Tc

Drain-source On Resistance-Max :

0.0035Ohm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Series :

TrenchFET®

Element Configuration :

Single

Turn-Off Delay Time :

31 ns

Mounting Type :

Surface Mount

Number of Terminations :

5

Continuous Drain Current (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

14 Weeks

Case Connection :

DRAIN

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-C5

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V

Published :

2011

Rise Time :

8ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Package / Case :

PowerPAK® SO-8

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ