SIR610DP-T1-RE3

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Mfr.Part #
SIR610DP-T1-RE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 200V 35.4A PPAK SO-8
Stock
3,637
In Stock :
3,637

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
14 Weeks
Continuous Drain Current (ID) :
8.6A
Mounting Type :
Surface Mount
FET Type :
N-Channel
Reach Compliance Code :
Unknown
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
1380pF @ 100V
Series :
ThunderFET®
Manufacturer Package Identifier :
S17-0173-Single
Package / Case :
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs :
31.9m Ω @ 10A, 10V
Drain to Source Breakdown Voltage :
200V
Current - Continuous Drain (Id) @ 25°C :
35.4A Tc
Turn-Off Delay Time :
20 ns
Drive Voltage (Max Rds On,Min Rds On) :
7.5V 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Junction Temperature (Tj) :
150°C
Turn On Delay Time :
9 ns
Power Dissipation-Max :
104W Tc
Number of Channels :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Height :
1.17mm
RoHS Status :
ROHS3 Compliant
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Power Dissipation :
6.25W
Datasheets
SIR610DP-T1-RE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR610DP-T1-RE3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® SO-8, Number of Channels:1, SIR610DP-T1-RE3 pinout, SIR610DP-T1-RE3 datasheet PDF, SIR610DP-T1-RE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR610DP-T1-RE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR610DP-T1-RE3


N-Channel Tape & Reel (TR) 31.9m Ω @ 10A, 10V ±20V 1380pF @ 100V 38nC @ 10V PowerPAK® SO-8

SIR610DP-T1-RE3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1380pF @ 100V.This device has a continuous drain current (ID) of [8.6A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=200V, the drain-source breakdown voltage is 200V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (7.5V 10V).

SIR610DP-T1-RE3 Features


a continuous drain current (ID) of 8.6A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 20 ns


SIR610DP-T1-RE3 Applications


There are a lot of Vishay Siliconix
SIR610DP-T1-RE3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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