SIR638DP-T1-GE3

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Mfr.Part #
SIR638DP-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 40V 100A PPAK SO-8
Stock
3,822
In Stock :
3,822

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
40V
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 20V
Continuous Drain Current (ID) :
100A
Gate Charge (Qg) (Max) @ Vgs :
204nC @ 10V
ECCN Code :
EAR99
Vgs (Max) :
+20V, -16V
Current - Continuous Drain (Id) @ 25°C :
100A Tc
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2011
Reach Compliance Code :
Unknown
FET Type :
N-Channel
Packaging :
Tape and Reel (TR)
Vgs(th) (Max) @ Id :
2.3V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Series :
TrenchFET®
Rds On (Max) @ Id, Vgs :
0.88m Ω @ 20A, 10V
Power Dissipation-Max :
104W Tc
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Surface Mount
Factory Lead Time :
14 Weeks
Mount :
Surface Mount
Package / Case :
PowerPAK® SO-8
Datasheets
SIR638DP-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SIR638DP-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:PowerPAK® SO-8, SIR638DP-T1-GE3 pinout, SIR638DP-T1-GE3 datasheet PDF, SIR638DP-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIR638DP-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIR638DP-T1-GE3


N-Channel Tape & Reel (TR) 0.88m Ω @ 20A, 10V +20V, -16V 10500pF @ 20V 204nC @ 10V 40V PowerPAK® SO-8

SIR638DP-T1-GE3 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 10500pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 100A.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SIR638DP-T1-GE3 Features


a continuous drain current (ID) of 100A
a 40V drain to source voltage (Vdss)


SIR638DP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR638DP-T1-GE3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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