SIR668DP-T1-RE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

1.17mm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

17 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Series :

TrenchFET® Gen IV

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 20A, 10V

Turn-Off Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 50V

FET Type :

N-Channel

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

23.2A

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Unknown

Number of Channels :

1

Power Dissipation-Max :

104W Tc

Manufacturer Package Identifier :

S17-0173-Single

Factory Lead Time :

14 Weeks

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

83nC @ 7.5V

Power Dissipation :

6.25W

Package / Case :

PowerPAK® SO-8