SIR664DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Form :

C BEND

Turn-Off Delay Time :

24 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 30V

Continuous Drain Current (ID) :

60A

Rise Time :

12ns

Factory Lead Time :

14 Weeks

Min Operating Temperature :

-55°C

Transistor Application :

SWITCHING

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Max Operating Temperature :

150°C

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation :

5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.006Ohm

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

6m Ω @ 20A, 10V

Published :

2013

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-PDSO-C5

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Fall Time (Typ) :

7 ns

Mounting Type :

Surface Mount

Max Power Dissipation :

5W

Contact Plating :

Tin

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

20 mJ

Drain to Source Breakdown Voltage :

60V