SIR662DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

4365pF @ 30V

Terminal Form :

C BEND

JESD-30 Code :

R-XDSO-C5

Package / Case :

PowerPAK® SO-8

Power Dissipation :

6.25W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

6.25W Ta 104W Tc

Threshold Voltage :

1V

Published :

2011

Transistor Element Material :

SILICON

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Number of Channels :

1

Mounting Type :

Surface Mount

Nominal Vgs :

1 V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Lead Free :

Lead Free

Pbfree Code :

yes

Weight :

506.605978mg

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Number of Terminations :

5

Radiation Hardening :

No

FET Type :

N-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Element Configuration :

Single

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Resistance :

2.7MOhm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

Continuous Drain Current (ID) :

60A