SIR644DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0027Ohm

Published :

2011

Rise Time :

5ns

Factory Lead Time :

15 Weeks

Package / Case :

PowerPAK® SO-8

Power Dissipation-Max :

5.2W Ta 69W Tc

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

FET Type :

N-Channel

Fall Time (Typ) :

5 ns

Case Connection :

DRAIN

Number of Channels :

1

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Element Configuration :

Single

Terminal Position :

Dual

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

ECCN Code :

EAR99

Turn-Off Delay Time :

29 ns

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PDSO-C5

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

200A

Number of Terminations :

5

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Vgs (Max) :

±20V

Power Dissipation :

5.2W

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V