SIR642DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 15A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Height :

1.04mm

Turn-Off Delay Time :

38 ns

Drain-source On Resistance-Max :

0.0024Ohm

RoHS Status :

ROHS3 Compliant

Weight :

506.605978mg

Number of Terminations :

5

Input Capacitance (Ciss) (Max) @ Vds :

4155pF @ 20V

Vgs (Max) :

±20V

Element Configuration :

Single

Width :

5.15mm

ECCN Code :

EAR99

Rise Time :

105ns

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Power Dissipation-Max :

4.8W Ta 41.7W Tc

Pbfree Code :

yes

Series :

TrenchFET®

Continuous Drain Current (ID) :

60A

Case Connection :

DRAIN

Factory Lead Time :

51 Weeks

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Published :

2015

Reach Compliance Code :

not_compliant

Turn On Delay Time :

30 ns

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Number of Channels :

1

Power Dissipation :

5.4W

Operating Temperature :

-55°C~150°C TJ

Packaging :

Digi-Reel®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

84nC @ 10V

Package / Case :

PowerPAK® SO-8

Length :

6.15mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-C5