SIJH600E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

0.92Ohm @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

9950 pF @ 30 V

Current - Continuous Drain (Id) @ 25°C :

37A (Ta), 373A (Tc)

Number of Elements per Chip :

1

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

212 nC @ 10 V

Supplier Device Package :

PowerPAK? 8 x 8

Drive Voltage (Max Rds On, Min Rds On) :

7.5V, 10V

RoHS :

Details

MSL :

MSL 1 - Unlimited

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Rise Time :

20 ns

Configuration :

Single

Qualification :

-

Power Dissipation :

333W

Drain to Source Voltage (Vdss) :

60 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Subcategory :

MOSFETs

FET Type :

N-Channel

Package Type :

PowerPAK 8 x 8L

Maximum Operating Temperature :

+ 175 C

Manufacturer :

Vishay

Package / Case :

PowerPAK? 8 x 8

Mounting Type :

Surface Mount

FET Feature :

-

Product Status :

Active

Package :

Digi-Reel?

Continuous Drain Current Id :

373A

Brand :

Vishay Semiconductors

Channel Type :

N

Series :

TrenchFET? Gen IV

Pin Count :

4

Product Type :

MOSFET

Channel Mode :

Enhancement

Power Dissipation (Max) :

3.3W (Ta), 333W (Tc)

Mounting Style :

SMD/SMT

Operating Temperature :

-55°C ~ 175°C (TJ)