SIJH112E-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

3.3W (Ta), 333W (Tc)

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Feature :

-

Number of Elements per Chip :

1

Supplier Device Package :

PowerPAK? 8 x 8

Brand :

Vishay / Siliconix

Transistor Type :

TrenchFET Gen IV Power MOSFET

Packaging :

MouseReel

Qualification :

-

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

160 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

23A (Ta), 225A (Tc)

Package :

Digi-Reel?

Product Status :

Active

Manufacturer :

Vishay

Drain to Source Voltage (Vdss) :

100 V

Input Capacitance (Ciss) (Max) @ Vds :

8050 pF @ 50 V

Power Dissipation :

333

Product Type :

MOSFET

Configuration :

Single

Pin Count :

4

Channel Type :

N

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS :

Details

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.8mOhm @ 20A, 10V

Tradename :

TrenchFET

Subcategory :

MOSFETs

Package / Case :

8-PowerTDFN

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Number of Channels :

1 Channel

Package Type :

PowerPAK 8 x 8L

Continuous Drain Current Id :

225

Channel Mode :

Enhancement

Base Product Number :

SIJH112

Rise Time :

29 ns