SIHK125N60EF-T1GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

1863 pF @ 100 V

Manufacturer :

Vishay

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Power Dissipation (Max) :

132W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Packaging :

MouseReel

Subcategory :

MOSFETs

Product Category :

MOSFET

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600 V

Series :

EF

Vgs (Max) :

±30V

Rise Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Operating Temperature :

-55°C ~ 150°C

Transistor Type :

1 N-Channel

Brand :

Vishay Semiconductors

Minimum Operating Temperature :

- 55 C

Package / Case :

8-PowerBSFN

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

FET Type :

N-Channel

Product Status :

Active

Rds On (Max) @ Id, Vgs :

125mOhm @ 12A, 10V

Product Type :

MOSFET

Supplier Device Package :

PowerPAK?10 x 12

Package :

Digi-Reel?

Mounting Style :

SMD/SMT