SIHK045N60EF-T1GE3

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Mfr.Part #
SIHK045N60EF-T1GE3
Manufacturer
Vishay
Package / Case
8-PowerBSFN
Datasheet
Download
Description
E SERIES POWER MOSFET WITH FAST
Stock
2,014
In Stock :
2,014

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C ~ 150°C (TJ)
FET Type :
N-Channel
Product Status :
Active
Manufacturer :
Vishay
Number of Channels :
1 Channel
Package / Case :
8-PowerBSFN
Gate Charge (Qg) (Max) @ Vgs :
105 nC @ 10 V
Supplier Device Package :
PowerPAK?10 x 12
Mounting Style :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
47A (Tc)
Power Dissipation (Max) :
278W (Tc)
Mounting Type :
Surface Mount
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
4685 pF @ 100 V
Series :
EF
Transistor Type :
1 N-Channel
Packaging :
MouseReel
Product Type :
MOSFET
Brand :
Vishay Semiconductors
Vgs(th) (Max) @ Id :
5V @ 250μA
Vgs (Max) :
±30V
RoHS :
Details
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
52mOhm @ 17A, 10V
Drain to Source Voltage (Vdss) :
600 V
Transistor Polarity :
N-Channel
Package :
Digi-Reel?
FET Feature :
-
Minimum Operating Temperature :
- 55 C
Maximum Operating Temperature :
+ 175 C
Rise Time :
6 ns
Product Category :
MOSFET
Subcategory :
MOSFETs
Introducing Transistors - FETs, MOSFETs - Single Vishay SIHK045N60EF-T1GE3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C ~ 150°C (TJ), Number of Channels:1 Channel, Package / Case:8-PowerBSFN, Mounting Type:Surface Mount, SIHK045N60EF-T1GE3 pinout, SIHK045N60EF-T1GE3 datasheet PDF, SIHK045N60EF-T1GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SIHK045N60EF-T1GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SIHK045N60EF-T1GE3


N-Channel MouseReel 52mOhm @ 17A, 10V ±30V 4685 pF @ 100 V 105 nC @ 10 V 600 V 8-PowerBSFN

SIHK045N60EF-T1GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4685 pF @ 100 V.The transistor must receive a 600 V drain to source voltage (Vdss) in order to function.

SIHK045N60EF-T1GE3 Features


a 600 V drain to source voltage (Vdss)


SIHK045N60EF-T1GE3 Applications


There are a lot of Vishay Siliconix
SIHK045N60EF-T1GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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