SIE726DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Series :

SkyFET®, TrenchFET®

FET Type :

N-Channel

Resistance :

3.3MOhm

Pin Count :

10

Pbfree Code :

yes

Continuous Drain Current (ID) :

14A

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

60A

Number of Elements :

1

Mount :

Surface Mount, Through Hole

Radiation Hardening :

No

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

60 ns

Number of Pins :

10

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

80A

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Power Dissipation :

5.2W

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Additional Feature :

ULTRA-LOW RESISTANCE

Published :

2016

Package / Case :

10-PolarPAK® (L)

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

55 ns

JESD-30 Code :

R-XDSO-N4

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

125 mJ

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

5.2W Ta 125W Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Transistor Application :

SWITCHING