SIE726DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Published :

2012

Vgs (Max) :

±20V

Power Dissipation :

5.2W

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 15V

Mounting Type :

Surface Mount

Pin Count :

10

ECCN Code :

EAR99

Series :

SkyFET®, TrenchFET®

Mount :

Surface Mount

Continuous Drain Current (ID) :

60A

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

125 mJ

JESD-30 Code :

R-XDSO-N4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

60 ns

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Terminal Finish :

PURE MATTE TIN

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

80A

Fall Time (Typ) :

30 ns

Peak Reflow Temperature (Cel) :

260

Rise Time :

35ns

JESD-609 Code :

e3

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

5.2W Ta 125W Tc

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

55 ns

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Package / Case :

10-PolarPAK® (L)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

10

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Drain-source On Resistance-Max :

0.0033Ohm

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No