SIDR626DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

3.4V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.7mOhm @ 20A, 10V

Supplier Device Package :

PowerPAK® SO-8DC

Factory Lead Time :

14 Weeks

Power Dissipation-Max :

6.25W Ta 125W Tc

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

60V

Current - Continuous Drain (Id) @ 25°C :

42.8A Ta 100A Tc

Package / Case :

PowerPAK® SO-8

Input Capacitance (Ciss) (Max) @ Vds :

5130pF @ 30V

Series :

TrenchFET® Gen IV

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V