SIDR170DP-T1-RE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Vishay

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

TrenchFET? Gen IV

Rise Time :

10 ns

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Package :

Digi-Reel?

Supplier Device Package :

PowerPAK? SO-8DC

Brand :

Vishay / Siliconix

Product Category :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

23.2A (Ta), 95A (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

6195 pF @ 50 V

Power Dissipation :

125

Rds On (Max) @ Id, Vgs :

4.8mOhm @ 20A, 10V

Maximum Operating Temperature :

+ 150 C

Number of Channels :

1 Channel

Product Type :

MOSFET

Configuration :

Single

Base Product Number :

SIDR170

FET Feature :

-

Continuous Drain Current Id :

95

Transistor Polarity :

N-Channel

Mounting Type :

Surface Mount

Channel Type :

N

Vgs (Max) :

±20V

Mounting Style :

SMD/SMT

Package / Case :

PowerPAK? SO-8

Number of Elements per Chip :

1

Gate Charge (Qg) (Max) @ Vgs :

140 nC @ 10 V

Product Status :

Active

Package Type :

PowerPAK SO-8DC

RoHS :

Details

Pin Count :

8

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Channel Mode :

Enhancement

Power Dissipation (Max) :

6.25W (Ta), 125W (Tc)

Transistor Type :

1 N-Channel

Packaging :

Cut Tape

Subcategory :

MOSFETs

Drain to Source Voltage (Vdss) :

100 V

Qualification :

-