SIA811DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

355pF @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Power Dissipation-Max :

1.9W Ta 6.5W Tc

Drain to Source Resistance :

94mOhm

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

1

Series :

LITTLE FOOT®

FET Feature :

Schottky Diode (Isolated)

Packaging :

Tape and Reel (TR)

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Turn-Off Delay Time :

20 ns

Height :

750μm

Turn On Delay Time :

5 ns

Resistance :

94mOhm

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

94 mΩ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rise Time :

10ns

Input Capacitance :

355pF

FET Type :

P-Channel

Weight :

28.009329mg

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-20V

Package / Case :

PowerPAK® SC-70-6 Dual

Width :

2.05mm

Supplier Device Package :

PowerPAK® SC-70-6 Dual

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

-4.5A

Length :

2.05mm

Rds On (Max) @ Id, Vgs :

94mOhm @ 2.8A, 4.5V

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 8V