SIA810DJ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

1.9W Ta 6.5W Tc

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 10V

Rds On (Max) @ Id, Vgs :

53m Ω @ 3.7A, 4.5V

FET Feature :

Schottky Diode (Isolated)

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Package / Case :

PowerPAK® SC-70-6 Dual

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 8V

Rise Time :

32ns

Pin Count :

6

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.053Ohm

Series :

LITTLE FOOT®

Published :

2016

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Turn-Off Delay Time :

30 ns

DS Breakdown Voltage-Min :

20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.5A

Number of Pins :

6

Number of Terminations :

6

Fall Time (Typ) :

53 ns