SI8499DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Resistance :

32mOhm

Mount :

Surface Mount

Threshold Voltage :

-500mV

Factory Lead Time :

21 Weeks

Terminal Form :

Ball

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

FET Type :

P-Channel

Vgs (Max) :

±12V

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Rise Time :

10ns

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

20A

Fall Time (Typ) :

30 ns

Number of Terminations :

6

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

55 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation :

2.77W

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

20V

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2015

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 5V

Rds On (Max) @ Id, Vgs :

32m Ω @ 1.5A, 4.5V

Package / Case :

6-UFBGA

Power Dissipation-Max :

2.77W Ta 13W Tc

Continuous Drain Current (ID) :

7.8A

Pin Count :

6

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Number of Pins :

6

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)