SI8401DB-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-20V

Series :

TrenchFET®

Number of Elements :

1

JESD-609 Code :

e1

Vgs (Max) :

±12V

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Package / Case :

4-XFBGA, CSPBGA

FET Type :

P-Channel

Nominal Vgs :

-4.5 V

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Turn On Delay Time :

17 ns

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Rise Time :

28ns

Lead Free :

Lead Free

Power Dissipation-Max :

1.47W Ta

Termination :

SMD/SMT

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

1.6mm

Factory Lead Time :

33 Weeks

Pbfree Code :

yes

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3.6A Ta

Number of Channels :

1

Turn-Off Delay Time :

88 ns

Power Dissipation :

2.77W

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-4.5V

Rds On (Max) @ Id, Vgs :

65m Ω @ 1A, 4.5V

Published :

2013

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-3.6A

Length :

1.6mm

REACH SVHC :

Unknown

Pin Count :

4

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Mounting Type :

Surface Mount

Mount :

Surface Mount

Terminal Form :

Ball

Resistance :

65mOhm

Fall Time (Typ) :

28 ns

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

BOTTOM

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Element Configuration :

Single

Height :

360μm