SI8497DB-T2-E1

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Mfr.Part #
SI8497DB-T2-E1
Manufacturer
Vishay
Package / Case
6-UFBGA
Datasheet
Download
Description
MOSFET P-CH 30V 13A 6MICROFOOT
Stock
6,589
In Stock :
6,589

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
2.77W Ta 13W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Packaging :
Digi-Reel®
Number of Pins :
6
Number of Channels :
1
Input Capacitance :
1.32nF
Rds On Max :
53 mΩ
Gate to Source Voltage (Vgs) :
12V
Fall Time (Typ) :
22 ns
Published :
2015
Vgs(th) (Max) @ Id :
1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 15V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Continuous Drain Current (ID) :
13A
Rise Time :
10ns
Drive Voltage (Max Rds On,Min Rds On) :
2V 4.5V
Drain to Source Resistance :
53mOhm
Turn On Delay Time :
50 ns
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Factory Lead Time :
21 Weeks
Series :
TrenchFET®
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Min Operating Temperature :
-55°C
Supplier Device Package :
6-microfoot
Rds On (Max) @ Id, Vgs :
53mOhm @ 1.5A, 4.5V
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
75 ns
Package / Case :
6-UFBGA
FET Type :
P-Channel
Vgs (Max) :
±12V
Max Operating Temperature :
150°C
Mounting Type :
Surface Mount
Radiation Hardening :
No
Datasheets
SI8497DB-T2-E1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI8497DB-T2-E1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:6-UFBGA, Mounting Type:Surface Mount, SI8497DB-T2-E1 pinout, SI8497DB-T2-E1 datasheet PDF, SI8497DB-T2-E1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI8497DB-T2-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI8497DB-T2-E1


P-Channel Digi-Reel® 53mOhm @ 1.5A, 4.5V ±12V 1320pF @ 15V 49nC @ 10V 30V 6-UFBGA

SI8497DB-T2-E1 Overview


A device's maximal input capacitance is 1320pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 53mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2V 4.5V).

SI8497DB-T2-E1 Features


a continuous drain current (ID) of 13A
the turn-off delay time is 75 ns
single MOSFETs transistor is 53mOhm
a 30V drain to source voltage (Vdss)


SI8497DB-T2-E1 Applications


There are a lot of Vishay Siliconix
SI8497DB-T2-E1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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