SI8489EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Ball

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Turn-Off Delay Time :

50 ns

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Drain to Source Voltage (Vdss) :

20V

Rds On (Max) @ Id, Vgs :

44m Ω @ 1.5A, 10V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Factory Lead Time :

33 Weeks

Series :

TrenchFET®

Transistor Application :

SWITCHING

Element Configuration :

Single

Published :

2015

Mount :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Channels :

1

Rise Time :

20ns

Package / Case :

4-UFBGA

Contact Plating :

Tin

Power Dissipation :

1.8W

Terminal Position :

BOTTOM

Input Capacitance (Ciss) (Max) @ Vds :

765pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5.4A

Fall Time (Typ) :

25 ns

Turn On Delay Time :

27 ns

Number of Pins :

4

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

780mW Ta 1.8W Tc

Drain to Source Breakdown Voltage :

-20V