SI8487DB-T1-E1
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- Mfr.Part #
- SI8487DB-T1-E1
- Manufacturer
- Vishay
- Package / Case
- 4-UFBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4MICROFOOT
- Stock
- 7,081
- In Stock ：
- 7,081
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 10V
- ECCN Code :
- EAR99
- Published :
- 2014
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 1.1W Ta 2.7W Tc
- Element Configuration :
- Single
- Threshold Voltage :
- -600mV
- REACH SVHC :
- No SVHC
- Number of Channels :
- 1
- Factory Lead Time :
- 21 Weeks
- Turn-Off Delay Time :
- 290 ns
- Turn On Delay Time :
- 7 ns
- Rds On (Max) @ Id, Vgs :
- 31m Ω @ 2A, 10V
- Rise Time :
- 10ns
- Radiation Hardening :
- No
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 60 ns
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Package / Case :
- 4-UFBGA
- Vgs (Max) :
- ±12V
- Drain to Source Breakdown Voltage :
- -30V
- Gate to Source Voltage (Vgs) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- -7.7A
- Mounting Type :
- Surface Mount
- Packaging :
- Digi-Reel®
- Terminal Finish :
- Matte Tin (Sn)
- Number of Pins :
- 4
- Input Capacitance (Ciss) (Max) @ Vds :
- 2240pF @ 15V
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- P-Channel
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Datasheets
- SI8487DB-T1-E1
P-Channel Digi-Reel® 31m Ω @ 2A, 10V ±12V 2240pF @ 15V 80nC @ 10V 30V 4-UFBGA
SI8487DB-T1-E1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2240pF @ 15V.This device has a continuous drain current (ID) of [-7.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-30V, the drain-source breakdown voltage is -30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 290 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -600mV.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 10V).
SI8487DB-T1-E1 Features
a continuous drain current (ID) of -7.7A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 290 ns
a threshold voltage of -600mV
a 30V drain to source voltage (Vdss)
SI8487DB-T1-E1 Applications
There are a lot of Vishay Siliconix
SI8487DB-T1-E1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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