SI8483DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

20ns

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

25A

Height :

310μm

Package / Case :

6-UFBGA

Continuous Drain Current (ID) :

-16A

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Power Dissipation :

2.77W

Drain-source On Resistance-Max :

0.035Ohm

Vgs(th) (Max) @ Id :

800mV @ 250μA

Number of Pins :

6

Power Dissipation-Max :

2.77W Ta 13W Tc

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1840pF @ 6V

ECCN Code :

EAR99

Turn-Off Delay Time :

80 ns

Threshold Voltage :

-400mV

Factory Lead Time :

21 Weeks

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

12V

Published :

2013

Width :

1mm

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Radiation Hardening :

No

Fall Time (Typ) :

20 ns

Turn On Delay Time :

20 ns

Length :

1.5mm

Vgs (Max) :

±10V

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Mount :

Surface Mount

Terminal Form :

Ball

Mounting Type :

Surface Mount

Number of Channels :

1

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

26m Ω @ 1.5A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Number of Elements :

1

JESD-609 Code :

e3

Transistor Application :

SWITCHING