SI8481DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

900mV @ 250μA

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 4.5V

Factory Lead Time :

21 Weeks

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

300 ns

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

S-PBGA-B4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Continuous Drain Current (ID) :

-6.2A

Rds On (Max) @ Id, Vgs :

21m Ω @ 3A, 4.5V

Mounting Type :

Surface Mount

Terminal Form :

Ball

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

2.8W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Vgs (Max) :

±8V

Drain-source On Resistance-Max :

0.025Ohm

Package / Case :

4-UFBGA

Number of Elements :

1

Drain to Source Breakdown Voltage :

-20V

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 10V

FET Type :

P-Channel

Turn On Delay Time :

16 ns

ECCN Code :

EAR99

Surface Mount :

yes

Power Dissipation :

1.1W

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Height :

600μm

Series :

TrenchFET® Gen III