SI8475EDB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Continuous Drain Current (ID) :

7.7A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Number of Terminations :

4

Fall Time (Typ) :

80 μs

Rds On (Max) @ Id, Vgs :

32m Ω @ 1A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

1.1W Ta 2.7W Tc

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

FET Type :

P-Channel

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Published :

2016

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±12V

Factory Lead Time :

13 Weeks

Number of Pins :

4

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Terminal Form :

Ball

Package / Case :

4-XFBGA, CSPBGA

Pulsed Drain Current-Max (IDM) :

25A

Avalanche Energy Rating (Eas) :

80 mJ

Transistor Application :

SWITCHING

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

0.051Ohm

Terminal Finish :

Pure Matte Tin (Sn)