SI8473EDB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Ball

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Finish :

Pure Matte Tin (Sn)

Package / Case :

4-XFBGA, CSPBGA

Pin Count :

4

Gate to Source Voltage (Vgs) :

12V

Number of Channels :

1

Number of Pins :

4

Power Dissipation-Max :

1.1W Ta 2.7W Tc

Terminal Position :

BOTTOM

Number of Terminations :

4

Drain-source On Resistance-Max :

0.055Ohm

Rds On (Max) @ Id, Vgs :

41m Ω @ 1A, 4.5V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Drain to Source Breakdown Voltage :

-20V

FET Type :

P-Channel

Transistor Element Material :

SILICON

Threshold Voltage :

-1.5V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-7.1A

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2005

Series :

TrenchFET®