SI8472DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 10V

JESD-609 Code :

e3

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

900mV @ 250μA

Power Dissipation-Max :

780mW Ta

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Factory Lead Time :

33 Weeks

Element Configuration :

Single

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

4-UFBGA

Rds On (Max) @ Id, Vgs :

44m Ω @ 1.5A, 4.5V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Number of Terminations :

4

Radiation Hardening :

No

Mount :

Surface Mount

Continuous Drain Current (ID) :

4.5A

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Ball

Resistance :

44mOhm

Lead Free :

Lead Free

Published :

2017

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

S-PBGA-B4

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

BOTTOM

Number of Elements :

1