SI8469DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

BOTTOM

Turn On Delay Time :

15 ns

Pin Count :

4

Gate to Source Voltage (Vgs) :

5V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Power Dissipation :

780mW

ECCN Code :

EAR99

Continuous Drain Current (ID) :

3.6A

Number of Pins :

4

Number of Terminations :

4

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

64m Ω @ 1.5A, 4.5V

DS Breakdown Voltage-Min :

8V

Number of Channels :

1

Factory Lead Time :

15 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Published :

2013

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Package / Case :

4-UFBGA

Number of Elements :

1

Power Dissipation-Max :

780mW Ta 1.8W Tc

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 4V

Turn-Off Delay Time :

35 ns

Fall Time (Typ) :

17 ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Resistance :

64mOhm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

800mV @ 250μA

Drain to Source Voltage (Vdss) :

8V

Lead Free :

Lead Free

Vgs (Max) :

±5V

Terminal Form :

Ball

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel