SI8467DB-T2-E1
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- Mfr.Part #
- SI8467DB-T2-E1
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA, CSPBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4MICROFOOT
- Stock
- 29,298
- In Stock ：
- 29,298
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 73mOhm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 20V
- Series :
- TrenchFET®
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Published :
- 2010
- Power Dissipation-Max :
- 780mW Ta 1.8W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 25 ns
- Number of Terminations :
- 4
- Number of Pins :
- 4
- Mount :
- Surface Mount
- Terminal Form :
- Ball
- Rds On (Max) @ Id, Vgs :
- 73m Ω @ 1A, 4.5V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- -1.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Fall Time (Typ) :
- 20 ns
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 45ns
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Turn-Off Delay Time :
- 50 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 475pF @ 10V
- Continuous Drain Current (ID) :
- -3.7A
- Radiation Hardening :
- No
- Package / Case :
- 4-XFBGA, CSPBGA
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Vgs (Max) :
- ±12V
- Datasheets
- SI8467DB-T2-E1
P-Channel Tape & Reel (TR) 73m Ω @ 1A, 4.5V ±12V 475pF @ 10V 21nC @ 10V 20V 4-XFBGA, CSPBGA
SI8467DB-T2-E1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 475pF @ 10V.This device conducts a continuous drain current (ID) of -3.7A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 25 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be -1.5V.A normal operation of the DS requires keeping the breakdown voltage above 20V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).
SI8467DB-T2-E1 Features
a continuous drain current (ID) of -3.7A
the turn-off delay time is 50 ns
a 20V drain to source voltage (Vdss)
SI8467DB-T2-E1 Applications
There are a lot of Vishay Siliconix
SI8467DB-T2-E1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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