SI8466EDB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Turn-Off Delay Time :

80 ns

Power Dissipation :

1.8W

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Package / Case :

4-UFBGA, WLCSP

Power Dissipation-Max :

780mW Ta 1.8W Tc

Reach Compliance Code :

Unknown

Packaging :

Cut Tape (CT)

Rise Time :

30ns

Terminal Form :

Ball

Number of Elements :

1

Mount :

Surface Mount

Number of Terminations :

4

Number of Pins :

4

Transistor Application :

SWITCHING

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

700mV

Published :

2016

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 4V

Continuous Drain Current (ID) :

5.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

8V

ECCN Code :

EAR99

Factory Lead Time :

33 Weeks

Turn On Delay Time :

20 ns

Rds On (Max) @ Id, Vgs :

43m Ω @ 2A, 4.5V

Transistor Element Material :

SILICON

Vgs (Max) :

±5V

Vgs(th) (Max) @ Id :

700mV @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM