SI8461DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Pin Count :

4

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn On Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Elements :

1

Number of Pins :

4

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 10V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Mounting Type :

Surface Mount

Resistance :

100MOhm

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Rise Time :

25ns

Continuous Drain Current (ID) :

-3.7A

Threshold Voltage :

-1V

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

35 ns

Number of Channels :

1

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.5A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 8V

Drain to Source Voltage (Vdss) :

20V

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Vgs (Max) :

±8V

Terminal Form :

Ball

Transistor Application :

SWITCHING

Power Dissipation-Max :

780mW Ta 1.8W Tc

Drain to Source Breakdown Voltage :

-20V

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Terminal Position :

BOTTOM

Drain Current-Max (Abs) (ID) :

2.5A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Package / Case :

4-XFBGA, CSPBGA

Power Dissipation :

780mW

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Element Configuration :

Single