SI8457DB-T1-E1

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Mfr.Part #
SI8457DB-T1-E1
Manufacturer
Vishay
Package / Case
4-UFBGA
Datasheet
Download
Description
MOSFET P-CH 12V 4MICRO FOOT
Stock
4,357
In Stock :
4,357

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
4
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Resistance :
15mOhm
Drain to Source Voltage (Vdss) :
12V
Series :
TrenchFET®
Mount :
Surface Mount
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
2900pF @ 6V
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
700mV @ 250μA
Terminal Finish :
Matte Tin (Sn)
Rds On (Max) @ Id, Vgs :
19m Ω @ 3A, 4.5V
Threshold Voltage :
-900mV
Package / Case :
4-UFBGA
Published :
2014
Continuous Drain Current (ID) :
-10.2A
Factory Lead Time :
21 Weeks
REACH SVHC :
Unknown
Power Dissipation-Max :
1.1W Ta 2.7W Tc
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±8V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 8V
Datasheets
SI8457DB-T1-E1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI8457DB-T1-E1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Package / Case:4-UFBGA, Mounting Type:Surface Mount, SI8457DB-T1-E1 pinout, SI8457DB-T1-E1 datasheet PDF, SI8457DB-T1-E1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI8457DB-T1-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI8457DB-T1-E1


P-Channel Tape & Reel (TR) 19m Ω @ 3A, 4.5V ±8V 2900pF @ 6V 93nC @ 8V 12V 4-UFBGA

SI8457DB-T1-E1 Overview


A device's maximal input capacitance is 2900pF @ 6V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -10.2A, which represents the maximum continuous current it can conduct.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -900mV threshold voltage.This transistor requires a 12V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

SI8457DB-T1-E1 Features


a continuous drain current (ID) of -10.2A
a threshold voltage of -900mV
a 12V drain to source voltage (Vdss)


SI8457DB-T1-E1 Applications


There are a lot of Vishay Siliconix
SI8457DB-T1-E1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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