SI8451DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 8V

JESD-30 Code :

R-PBGA-B6

FET Type :

P-Channel

Pbfree Code :

yes

Mount :

Surface Mount

Resistance :

80mOhm

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Turn-Off Delay Time :

45 ns

Number of Elements :

1

Power Dissipation-Max :

2.77W Ta 13W Tc

Terminal Form :

Ball

Terminal Position :

BOTTOM

Number of Terminations :

6

Power Dissipation :

2.77W

Fall Time (Typ) :

30 ns

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

20V

Operating Temperature :

-55°C~150°C TJ

Published :

2009

Series :

TrenchFET®

Drain to Source Breakdown Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

10.8A Tc

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 10V

Continuous Drain Current (ID) :

-10.8A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

80m Ω @ 1A, 4.5V

Drain Current-Max (Abs) (ID) :

5A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±8V

Rise Time :

30ns

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

15A

Gate to Source Voltage (Vgs) :

8V

Package / Case :

6-UFBGA

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON