SI8447DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

75m Ω @ 1A, 4.5V

Drain Current-Max (Abs) (ID) :

5.1A

Rise Time :

10ns

Vgs (Max) :

±12V

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING

Package / Case :

6-UFBGA

Number of Terminations :

6

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PBGA-B6

Power Dissipation :

2.77W

Terminal Form :

Ball

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

FET Type :

P-Channel

Pin Count :

6

Resistance :

75mOhm

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.2V @ 250µA

JESD-609 Code :

e3

Series :

TrenchFET®

Power Dissipation-Max :

2.77W Ta 13W Tc

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

15A

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Continuous Drain Current (ID) :

11A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

1.7V 4.5V