SI8445DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.8W Ta 11.4W Tc

Rds On (Max) @ Id, Vgs :

84m Ω @ 1A, 4.5V

Number of Pins :

4

Terminal Form :

Ball

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 10V

Turn On Delay Time :

11 ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 5V

FET Type :

P-Channel

Terminal Finish :

MATTE TIN

Power Dissipation :

1.8W

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Gate to Source Voltage (Vgs) :

5V

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

9.8A Tc

Series :

TrenchFET®

Pin Count :

4

Peak Reflow Temperature (Cel) :

260

Package / Case :

4-XFBGA, CSPBGA

Published :

2013

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Vgs (Max) :

±5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-9.8A

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

3.9A

Turn-Off Delay Time :

37 ns

Vgs(th) (Max) @ Id :

850mV @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

25ns

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

20V

Radiation Hardening :

No

Terminal Position :

BOTTOM