SI8441DB-T2-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

JESD-609 Code :

e3

Series :

TrenchFET®

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Ball

Number of Terminations :

6

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

Package / Case :

6-UFBGA

Vgs (Max) :

±5V

Number of Elements :

1

Vgs(th) (Max) @ Id :

700mV @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Power Dissipation :

2.77W

Drain Current-Max (Abs) (ID) :

4.8A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Continuous Drain Current (ID) :

-10.5A

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

2.77W Ta 13W Tc

Drain-source On Resistance-Max :

0.198Ohm

Gate to Source Voltage (Vgs) :

5V

Rise Time :

30ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Turn-Off Delay Time :

35 ns

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Terminal Position :

BOTTOM

Number of Pins :

6

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

80m Ω @ 1A, 4.5V

Pin Count :

6

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

15A

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 10V