SI8439DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

8V

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Number of Elements :

1

Vgs(th) (Max) @ Id :

800mV @ 250μA

Terminal Position :

BOTTOM

Continuous Drain Current (ID) :

-9.2A

Number of Channels :

1

ECCN Code :

EAR99

Power Dissipation-Max :

1.1W Ta 2.7W Tc

Turn On Delay Time :

30 ns

Radiation Hardening :

No

JESD-609 Code :

e3

FET Type :

P-Channel

Vgs (Max) :

±5V

Series :

TrenchFET®

Rise Time :

25ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Gate to Source Voltage (Vgs) :

-800mV

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Package / Case :

4-UFBGA

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

25m Ω @ 1.5A, 4.5V

Packaging :

Digi-Reel®

Terminal Form :

Ball

Threshold Voltage :

-400mV

Drain-source On Resistance-Max :

0.025Ohm

Element Configuration :

Single

Drain to Source Breakdown Voltage :

-8V

Number of Pins :

4

Mounting Type :

Surface Mount

Fall Time (Typ) :

210 ns

Published :

2013

Number of Terminations :

4

Turn-Off Delay Time :

330 ns