SI8435DB-T1-E1

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Mfr.Part #
SI8435DB-T1-E1
Manufacturer
Vishay
Package / Case
4-XFBGA, CSPBGA
Datasheet
Download
Description
MOSFET P-CH 20V 10A 4MICROFOOT
Stock
9,111
In Stock :
9,111

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Supplier Device Package :
4-Microfoot
Mounting Type :
Surface Mount
Rds On Max :
41 mΩ
FET Type :
P-Channel
Packaging :
Tape and Reel (TR)
Turn On Delay Time :
15 ns
Package / Case :
4-XFBGA, CSPBGA
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 10V
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
5V
Drain to Source Resistance :
41mOhm
Number of Pins :
4
Continuous Drain Current (ID) :
-10A
Max Operating Temperature :
150°C
Rise Time :
29ns
Vgs (Max) :
±5V
Min Operating Temperature :
-55°C
Series :
TrenchFET®
Fall Time (Typ) :
91 ns
Drain to Source Voltage (Vdss) :
20V
Turn-Off Delay Time :
230 ns
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 5V
Vgs(th) (Max) @ Id :
1V @ 250μA
Drain to Source Breakdown Voltage :
-20V
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Published :
2016
Input Capacitance :
1.6nF
Power Dissipation-Max :
2.78W Ta 6.25W Tc
Rds On (Max) @ Id, Vgs :
41mOhm @ 1A, 4.5V
Datasheets
SI8435DB-T1-E1
Introducing Transistors - FETs, MOSFETs - Single Vishay SI8435DB-T1-E1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:4-XFBGA, CSPBGA, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, SI8435DB-T1-E1 pinout, SI8435DB-T1-E1 datasheet PDF, SI8435DB-T1-E1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI8435DB-T1-E1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI8435DB-T1-E1


P-Channel Tape & Reel (TR) 41mOhm @ 1A, 4.5V ±5V 1600pF @ 10V 35nC @ 5V 20V 4-XFBGA, CSPBGA

SI8435DB-T1-E1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1600pF @ 10V.This device conducts a continuous drain current (ID) of -10A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 230 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 41mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).

SI8435DB-T1-E1 Features


a continuous drain current (ID) of -10A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 230 ns
single MOSFETs transistor is 41mOhm
a 20V drain to source voltage (Vdss)


SI8435DB-T1-E1 Applications


There are a lot of Vishay Siliconix
SI8435DB-T1-E1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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