SI8435DB-T1-E1
- Mfr.Part #
- SI8435DB-T1-E1
- Manufacturer
- Vishay
- Package / Case
- 4-XFBGA, CSPBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 10A 4MICROFOOT
- Stock
- 9,111
- In Stock :
- 9,111
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- 4-Microfoot
- Mounting Type :
- Surface Mount
- Rds On Max :
- 41 mΩ
- FET Type :
- P-Channel
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 15 ns
- Package / Case :
- 4-XFBGA, CSPBGA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 10V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 5V
- Drain to Source Resistance :
- 41mOhm
- Number of Pins :
- 4
- Continuous Drain Current (ID) :
- -10A
- Max Operating Temperature :
- 150°C
- Rise Time :
- 29ns
- Vgs (Max) :
- ±5V
- Min Operating Temperature :
- -55°C
- Series :
- TrenchFET®
- Fall Time (Typ) :
- 91 ns
- Drain to Source Voltage (Vdss) :
- 20V
- Turn-Off Delay Time :
- 230 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Breakdown Voltage :
- -20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Published :
- 2016
- Input Capacitance :
- 1.6nF
- Power Dissipation-Max :
- 2.78W Ta 6.25W Tc
- Rds On (Max) @ Id, Vgs :
- 41mOhm @ 1A, 4.5V
- Datasheets
- SI8435DB-T1-E1
P-Channel Tape & Reel (TR) 41mOhm @ 1A, 4.5V ±5V 1600pF @ 10V 35nC @ 5V 20V 4-XFBGA, CSPBGA
SI8435DB-T1-E1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1600pF @ 10V.This device conducts a continuous drain current (ID) of -10A, which is the maximum continuous current transistor can conduct.Using VGS=-20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -20V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 230 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 41mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 15 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 5V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.5V 4.5V volts (1.5V 4.5V).
SI8435DB-T1-E1 Features
a continuous drain current (ID) of -10A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 230 ns
single MOSFETs transistor is 41mOhm
a 20V drain to source voltage (Vdss)
SI8435DB-T1-E1 Applications
There are a lot of Vishay Siliconix
SI8435DB-T1-E1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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