SI8429DB-T1-E1

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-10.2A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Width :

1.6mm

Terminal Form :

UNSPECIFIED

Drain to Source Breakdown Voltage :

-8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 4V

Gate to Source Voltage (Vgs) :

5V

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Turn-Off Delay Time :

260 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

155 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Pbfree Code :

yes

Mount :

Surface Mount

Series :

TrenchFET®

FET Type :

P-Channel

Height :

360μm

Pin Count :

4

Terminal Position :

BOTTOM

Pulsed Drain Current-Max (IDM) :

25A

Turn On Delay Time :

12 ns

JESD-609 Code :

e3

Power Dissipation :

2.77W

Package / Case :

4-XFBGA, CSPBGA

ECCN Code :

EAR99

Power Dissipation-Max :

2.77W Ta 6.25W Tc

Contact Plating :

Copper, Silver, Tin

Drain Current-Max (Abs) (ID) :

7.8A

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Published :

2011

Threshold Voltage :

-600mV

REACH SVHC :

Unknown

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Channels :

1

Length :

1.6mm

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11.7A Tc

Number of Terminations :

4

Factory Lead Time :

33 Weeks

Rise Time :

25ns

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Drain to Source Voltage (Vdss) :

8V

Vgs (Max) :

±5V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

800mV @ 250μA

Number of Elements :

1

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

35m Ω @ 1A, 4.5V

Resistance :

35mOhm